Samsung is poised to debut the highly anticipated Galaxy S23 FE smartphone in the imminent future. Speculations indicate that the company is employing its proprietary Exynos 2200 chipset in the forthcoming Fan Edition model as a strategy to manage production expenses.
Based on the most recent intelligence, Samsung is considering the introduction of a Galaxy S23 FE variant, powered by the Snapdragon 8 Gen 1 processor, for certain markets.
It is conjectured that this alternative Fan Edition model, equipped with Qualcomm’s Snapdragon 8 Gen 1, might be exclusively launched in the United States.
Recent sightings of the Snapdragon 8 Gen 1-powered S23 FE on Geekbench substantiate the existence of such a variant. This evidence reaffirms the presence of a Galaxy S23 FE model with a chipset crafted by Qualcomm.
The carrier-unlocked Galaxy S23 FE destined for the American market, identifiable by model number SM-S711U1, made an appearance on the online benchmark platform, Geekbench, earlier today. Equipped with Android 13, this version features 8GB of RAM and includes a “taro” motherboard, a term synonymous with the Snapdragon 8 Gen 1 chip.